Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 15, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4946762
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Funding
- National Science Foundation [DMR-1410888]
- MRSEC [DMR-1420013]
- NSF through the MRSEC program
- U.S. Department of Energy, Office of Science, Division of Materials Sciences and Engineering [10122]
- Department of Energy's Office of Biological and Environmental Research
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1410888] Funding Source: National Science Foundation
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We have spectroscopically determined the optical bandgaps and band offsets at epitaxial interfaces of BaSnO3 with SrTiO3(001) and LaAlO3(001). 28 u.c. BaSnO3 epitaxial films exhibit direct and indirect bandgaps of 3.56 +/- 0.05 eV and 2.93 +/- 0.05 eV, respectively. The lack of a significant Burstein-Moss shift corroborates the highly insulating, defect-free nature of the BaSnO3 films. The conduction band minimum is lower in electron energy in 5 u.c. films of BaSnO3 than in SrTiO3 and LaAlO3 by 0.4 +/- 0.2 eV and 3.7 +/- 0.2 eV, respectively. This result bodes well for the realization of oxide-based, high-mobility, two-dimensional electron systems that can operate at ambient temperature, since electrons generated in the SrTiO3 by modulation doping, or at the BaSnO3/LaAlO3 interface by polarization doping, can be transferred to and at least partially confined in the BaSnO3 film. Published by AIP Publishing.
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