Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4954638
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Funding
- Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2014R1A1A1035950]
- POSCO green science
- National Research Foundation of Korea [2014R1A1A1035950] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We report the enhancement of room-temperature electron mobility in La-doped BaSnO3 (LBSO) thin films with thermal strain induced by high temperature nitrogen (N-2) annealing. Simple annealing under an N-2 environment consistently doubled the electron mobility of the LBSO films on the SrTiO3 (STO) substrates to as high as 78 cm(2) V-1 s(-1) at a carrier concentration of 4.0 x 10(20) cm(-3). This enhancement is mainly attributed to annihilation of extended defects as a consequence of compressive strain induced by the difference in the thermal expansion coefficients of LBSO and STO. Our study suggests that thermal strain can be exploited to reduce extended defects and to facilitate electron transport in transparent oxide semiconductors. Published by AIP Publishing.
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