Related references
Note: Only part of the references are listed.High-mobility β-Ga2O3((2)over-bar01) single crystals grown by edge-defined film-fed growth method and their Schottky barrier diodes with Ni contact
Toshiyuki Oishi et al.
APPLIED PHYSICS EXPRESS (2015)
Electrical compensation by Ga vacancies in Ga2O3 thin films
E. Korhonen et al.
APPLIED PHYSICS LETTERS (2015)
Wide-bandgap semiconductor materials: For their full bloom
Shizuo Fujita
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
β-(AlxGa1-x)2O3/Ga2O3 (010) heterostructures grown on β-Ga2O3 (010) substrates by plasma-assisted molecular beam epitaxy
Stephen W. Kaun et al.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2015)
Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy
Zeng Zhang et al.
JOURNAL OF ELECTRONIC MATERIALS (2014)
Defects in GaN based transistors
A. Sasikumar et al.
GALLIUM NITRIDE MATERIALS AND DEVICES IX (2014)
Impact of proton irradiation on deep level states in n-GaN
Z. Zhang et al.
APPLIED PHYSICS LETTERS (2013)
Depletion-mode Ga2O3 metal-oxide-semiconductor field-effect transistors on β-Ga2O3 (010) substrates and temperature dependence of their device characteristics
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2013)
Ga2O3 Schottky Barrier Diodes Fabricated by Using Single-Crystal β-Ga2O3 (010) Substrates
Kohei Sasaki et al.
IEEE ELECTRON DEVICE LETTERS (2013)
MBE grown Ga2O3 and its power device applications
Kohei Sasaki et al.
JOURNAL OF CRYSTAL GROWTH (2013)
Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors
A. R. Arehart et al.
SOLID-STATE ELECTRONICS (2013)
Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy
Z. Zhang et al.
APPLIED PHYSICS LETTERS (2012)
Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
Masataka Higashiwaki et al.
APPLIED PHYSICS LETTERS (2012)
Schottky barrier height of Au on the transparent semiconducting oxide β-Ga2O3
M. Mohamed et al.
APPLIED PHYSICS LETTERS (2012)
Electrical properties of β-Ga2O3 single crystals grown by the Czochralski method
K. Irmscher et al.
JOURNAL OF APPLIED PHYSICS (2011)
Hydrogenated cation vacancies in semiconducting oxides
J. B. Varley et al.
JOURNAL OF PHYSICS-CONDENSED MATTER (2011)
Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy
A. R. Arehart et al.
APPLIED PHYSICS LETTERS (2010)
Oxygen vacancies and donor impurities in β-Ga2O3
J. B. Varley et al.
APPLIED PHYSICS LETTERS (2010)
Czochralski growth and characterization of β-Ga2O3 single crystals
Z. Galazka et al.
CRYSTAL RESEARCH AND TECHNOLOGY (2010)
Cathodoluminescence Studies of the Inhomogeneities in Sn-doped Ga2O3 Nanowires
S. I. Maximenko et al.
NANO LETTERS (2009)
Deep level optical and thermal spectroscopy of traps in n-GaN grown by ammonia molecular beam epitaxy
A. R. Arehart et al.
APPLIED PHYSICS LETTERS (2008)
Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy
A. Armstrong et al.
JOURNAL OF APPLIED PHYSICS (2008)
First-principles study of the structural, electronic, and optical properties of Ga2O3 in its monoclinic and hexagonal phases
Haiying He et al.
PHYSICAL REVIEW B (2006)
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
A Armstrong et al.
JOURNAL OF APPLIED PHYSICS (2005)
Donor structure and electric transport mechanism in β-Ga2O3 -: art. no. 155207
M Yamaga et al.
PHYSICAL REVIEW B (2003)
Optically and thermally detected deep levels in n-type Schottky and p+-n GaN diodes
A Hierro et al.
APPLIED PHYSICS LETTERS (2000)
Share Paper
