Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4940370
Keywords
-
Categories
Funding
- German Research Foundation (Deutsche Forschungsgemeinschaft) [BO 1629/10-1]
Ask authors/readers for more resources
The wake-up effect which is observed in ferroelectric hafnium oxide is investigated in yttrium doped hafnium oxide prepared by chemical solution deposition. It can be shown that not the amount of cycles but the duration of the applied electrical field is essential for the wake-up. Temperature dependent wake-up cycling in a range of -160 degrees C to 100 degrees C reveals a strong temperature activation of the wake-up, which can be attributed to ion rearrangement during cycling. By using asymmetrical electrodes, resistive valence change mechanism switching can be observed coincident with ferroelectric switching. From the given results, it can be concluded that redistribution of oxygen vacancies is the origin of the wake-up effect. (C) 2016 AIP Publishing LLC.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available