Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4954942
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT) Elements Strategy Initiative to Form Core Research Center
- Japan Society for the Promotion of Science (JSPS) KAKENHI [25889024]
- MEXT KAKENHI [26106509]
- Center for Integrated Nanotechnology Support at Tohoku University
- Nanotechnology Network Project of MEXT
- Grants-in-Aid for Scientific Research [26106509, 25889024, 16K14378] Funding Source: KAKEN
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To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf0.5Zr0.5)O-2 thin films were deposited on (111)Pt-coated SiO2, Si, and CaF2 substrates with thermal expansion coefficients of 0.47, 4.5, and 22 x 10(-6)/degrees C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf0.5Zr0.5)O-2 thin films deposited on SiO2 and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF2 substrates were under in-plane compressive strain, and their volume fraction of monoclinic phase was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 mu C/cm(2) was observed for Pt/(Hf0.5Zr0.5)O-2/Pt/TiO2/SiO2, while ferroelectricity was barely observable for Pt/(Hf0.5Zr0.5)O-2/Pt/TiO2/SiO2/CaF2. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf0.5Zr0.5)O-2 thin films. Published by AIP Publishing.
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