Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 13, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4944996
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Funding
- Nanoelectronics Research Corporation (NERC) through the Center for NanoFerroic Devices (CNFD), an SRC-NRI Nanoelectronics Research Initiative Center [2398.001]
- NSF through the Nebraska Materials Research Science and Engineering Center (MRSEC) [DMR-1420645]
- DOE Early Career Award [DE-SC0014189]
- DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering [DE-FG02-08ER46544]
- MEXT, Japan [25800184, 25247056, 15H01009]
- NSF [PHY11-25915]
- SpinNet
- Grants-in-Aid for Scientific Research [25800184, 15H01009, 25247056] Funding Source: KAKEN
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Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr2O3 is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr2O3, the maximal mobility of 0.1 m/(s Oe) is reached at E approximate to 0: 06 V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr2O3. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s Oe) can then be achieved at E = 0.2 V/nm. A split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality. (C) 2016 AIP Publishing LLC.
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