4.6 Article

Van der Waals epitaxy of functional MoO2 film on mica for flexible electronics

Journal

APPLIED PHYSICS LETTERS
Volume 108, Issue 25, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4954172

Keywords

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Funding

  1. Ministry of Science and Technology of Republic of China [MOST 103-2119-M-009-003-MY3]
  2. Ministry of Education [MOE-ATU 101W961]
  3. Center for Interdisciplinary Science at National Chiao Tung University
  4. National Natural Science Foundation of China [51371031, 50971015]
  5. Engineering and Physical Sciences Research Council [EP/N016718/1] Funding Source: researchfish
  6. EPSRC [EP/N016718/1] Funding Source: UKRI

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Flexible electronics have a great potential to impact consumer electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO2 films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO2 films are similar to those of the bulk. Flexible or free-standing MoO2 thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create flexible electronics based on functional oxides. Published by AIP Publishing.

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