Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4965708
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Funding
- National Natural Science Foundation of China [51472064, 51372056, 61308052, 51672057, 11434014]
- 863 Plan Project of Ministry of Science and Technology (MOST) [2014AA032904]
- MOST National Key Scientific Instrument and Equipment Development Projects [2011YQ120053]
- Fundamental Research Funds for the Central Universities [HIT.BRETIII.201220, HIT.NSRIF.2012045, HIT.ICRST.2010008]
- Program for Innovation Research of Science in Harbin Institute of Technology (PIRS of HIT) [201616]
- International Science and Technology Cooperation Program of China [2012DFR50020]
- Program for New Century Excellent Talents in University [NCET-13-0174]
- Strategic Priority Research Program (B) of the Chinese Academy of Sciences (CAS) [XDB07030200]
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We report the tunneling electroresistance effect (TER) in a Pt/BaTiO3(BTO)/Nb:SrTiO3 (n-STO) ferroelectric tunnel junction (FTJ). Using transmission electron microscopy, X-ray photoelectron spectroscopy, and piezoresponse force microscopy, we find that the thick BaTiO3 (5 nm) film is epitaxial and of high quality. A large ON/OFF resistance ratio of more than 10(4)% at room temperature is observed. Our experimental results as well as theoretical modeling reveal that the depletion region near the BTO/n-STO interface can be electrically modulated via ferroelectric polarization, which plays a key role for the TER effect. Moreover, both long retention and high switching reproducibility are observed in the Pt/BTO/n-STO FTJ. Our results provide some fundamental understandings of the TER mechanism in the FTJs using a semiconductor electrode and will be useful for FTJ-based nonvolatile devices design. Published by AIP Publishing.
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