Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4971312
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Funding
- European community seventh framework programme, Prometheus [308957]
- Technion-Israel Institute of Technology
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In this letter, we report on the proof of a concept of an innovative delta doping technique to fabricate an ensemble of nitrogen vacancy centers at shallow depths in (100) diamond. A nitrogen delta doped layer with a concentration of similar to 1.8 x 10(20) cm(-3) and a thickness of a few nanometers was produced using this method. Nitrogen delta doping was realized by producing a stable nitrogen terminated (N-terminated) diamond surface using the RF nitridation process and subsequently depositing a thin layer of diamond on the N-terminated diamond surface. The concentration of nitrogen on the N-terminated diamond surface and its stability upon exposure to chemical vapor deposition conditions are determined by x-ray photoelectron spectroscopy analysis. The SIMS profile exhibits a positive concentration gradient of 1.9 nm/decade and a negative gradient of 4.2 nm/decade. The proposed method offers a finer control on the thickness of the delta doped layer than the currently used ion implantation and delta doping techniques. Published by AIP Publishing.
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