Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4954700
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- U.S. ARO [W911NF1410346]
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We investigate and compare the charge noise in Si/SiO2 and Si/SiGe gate defined quantum dots with identically patterned gates by measuring the low frequency 1/f current noise through the biased quantum dots in the coulomb blockade regime. The current noise is normalized and used to extract a measurement of the potential energy noise in the system. Additionally, the temperature dependence of this noise is investigated. The measured charge noise in Si/SiO2 compares favorably with that of the SiGe device as well as previous measurements made on other substrates suggesting Si/SiO2 is a potential candidate for spin based quantum computing. Published by AIP Publishing.
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