Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4941540
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Funding
- NSF [EECS-1402886]
- DOE [FG02-09ER46552]
- Div Of Electrical, Commun & Cyber Sys
- Directorate For Engineering [1402886] Funding Source: National Science Foundation
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Photoluminescence spectroscopy has been employed to probe the near band-edge transitions in hexagonal BN (h-BN) epilayers synthesized under varying ammonia flow rates. The results suggest that the quasi-donor-acceptor pair emission line at 5.3 eV is due to the transition between the nitrogen vacancy and a deep acceptor, whereas the 5.5 eV emission line is due to the recombination of an exciton bound to a deep acceptor formed by carbon impurity occupying the nitrogen site. By growing h-BN under high ammonia flow rates, nitrogen vacancy related peaks can be eliminated and epilayers exhibiting pure free exciton emission have been obtained. (C) 2016 AIP Publishing LLC.
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