Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4939131
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Funding
- Young 973 National Program of the Chinese Ministry of Science and Technology [2015CB932700]
- National Natural Science Foundation of China [61502326, 41550110223, 61322408]
- Jiangsu Government [BK20150343]
- Ministry of Finance of China [SX21400213]
- Young 1000 Talent Program of China
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Boron Nitride (BN) is a two dimensional insulator with excellent chemical, thermal, mechanical, and optical properties, which make it especially attractive for logic device applications. Nevertheless, its insulating properties and reliability as a dielectric material have never been analyzed in-depth. Here, we present the first thorough characterization of BN as dielectric film using nanoscale and device level experiments complementing with theoretical study. Our results reveal that BN is extremely stable against voltage stress, and it does not show the reliability problems related to conventional dielectrics like HfO2, such as charge trapping and detrapping, stress induced leakage current, and untimely dielectric breakdown. Moreover, we observe a unique layerby- layer dielectric breakdown, both at the nanoscale and device level. These findings may be of interest for many materials scientists and could open a new pathway towards two dimensional logic device applications. (C) 2016 AIP Publishing LLC.
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