4.6 Article

High-speed modulator with interleaved junctions in zero-change CMOS photonics

Journal

APPLIED PHYSICS LETTERS
Volume 108, Issue 13, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4944999

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Funding

  1. DARPA POEM [HR0011-11-C-0100, HR0011-11-9-0009]

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A microring depletion modulator is demonstrated with T-shaped lateral p-n junctions used to realize efficient modulation while maximizing the RC limited bandwidth. The device having a 3 dB bandwidth of 13 GHz has been fabricated in a standard 45 nm microelectronics CMOS process. The cavity has a linewidth of 17 GHz and an average wavelength-shift of 9 pm/V in reverse-bias conditions. (C) 2016 AIP Publishing LLC.

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