Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 7, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4941995
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- DARPA POEM [HR0011-11-C-0100, HR0011-11-9-0009]
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A photodiode with 0.55 +/- 0.1 A/W responsivity at a wavelength of 1176.9 nm has been fabricated in a 45 nm microelectronics silicon-on-insulator foundry process. The resonant waveguide photodetector exploits carrier generation in silicon-germanium within a microring which is compatible with high-performance electronics. A 3 dB bandwidth of 5 GHz at -4V bias is obtained with a dark current of less than 20 pA. (C) 2016 AIP Publishing LLC.
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