Related references
Note: Only part of the references are listed.Highly Responsive ZnO/AlN/Si Heterostructure-Based Infrared- and Visible-Blind Ultraviolet Photodetectors With High Rejection Ratio
Basanta Roul et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2019)
Self-Powered, Broad Band, and Ultrafast InGaN-Based Photodetector
Arun Malla Chowdhury et al.
ACS APPLIED MATERIALS & INTERFACES (2019)
In-Plane Anisotropic Photoconduction in Nonpolar Epitaxial a-Plane GaN
Rohit Pant et al.
ACS APPLIED MATERIALS & INTERFACES (2018)
Design and analysis of InN - In0.25Ga0.75N single quantum well laser for short distance communication wavelength
Md Mobarak Hossain Polash et al.
OPTICAL ENGINEERING (2018)
High Detectivity and Rapid Response in Perovskite CsPbBr3 Single-Crystal Photodetector
Jianxu Ding et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2017)
Ultrafast photoresponse and enhanced photoresponsivity of Indium Nitride based broad band photodetector
Shibin Krishna et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2017)
Semiconductor-Insulator-Semiconductor Diode Consisting of Monolayer MoS2, h-BN, and GaN Heterostructure
Hyun Jeong et al.
ACS NANO (2015)
Band alignment at AlN/Si (111) and (001) interfaces
Sean W. King et al.
JOURNAL OF APPLIED PHYSICS (2015)
The function of a 60-nm-thick AlN buffer layer in n-ZnO/AlN/p-Si(111)
Wei Wang et al.
NANOSCALE RESEARCH LETTERS (2015)
p-GaN/i-InxGa1x N/n-GaN solar cell with indium compositional grading
Pramila Mahala et al.
OPTICAL AND QUANTUM ELECTRONICS (2015)
Electrical transport studies of MBE grown InGaN/Si isotype heterojunctions
Mahesh Kumar et al.
CURRENT APPLIED PHYSICS (2013)
Zinc Oxide Nanowire As an Electron-Extraction Layer for Broadband Polymer Photodetectors with an Inverted Device Structure
Tingbin Yang et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2012)
High Efficiency Si/CdS Radial Nanowire Heterojunction Photodetectors Using Etched Si Nanowire Templates
Santanu Manna et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2012)
Carrier-transport studies of III-nitride/Si3N4/Si isotype heterojunctions
Mahesh Kumar et al.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2012)
Optically-pumped dilute nitride spin-VCSEL
Kevin Schires et al.
OPTICS EXPRESS (2012)
Temperature dependent electrical transport behavior of InN/GaN heterostructure based Schottky diodes
Basanta Roul et al.
JOURNAL OF APPLIED PHYSICS (2011)
Growth of InN layers on Si (111) using ultra thin silicon nitride by NPA-MBE
Mahesh Kumar et al.
MATERIALS LETTERS (2011)
Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions
Basanta Roul et al.
SOLID STATE COMMUNICATIONS (2011)
Ultraviolet Photodetectors Based on Anodic TiO2 Nanotube Arrays
Jianping Zou et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2010)
Metal-Oxide-Semiconductor-Structured MgZnO Ultraviolet Photodetector with High Internal Gain
H. Zhu et al.
JOURNAL OF PHYSICAL CHEMISTRY C (2010)
The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures
O. Pakma et al.
JOURNAL OF APPLIED PHYSICS (2008)
Recent progress on 1.55-μm dilute-nitride lasers
Seth R. Bank et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2007)
Determination of the lateral barrier height of inhomogeneous Au/n-type InP/In Schottky barrier diodes
F. E. Cimilli et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2007)
Electrical characteristics of the hydrogen pre-annealed Au/n-GaAs Schottky barrier diodes as a function of temperature
Oe. Guellue et al.
APPLIED SURFACE SCIENCE (2007)
Valence band offset of InN/AlN heterojunctions measured by x-ray photoelectron spectroscopy
P. D. C. King et al.
APPLIED PHYSICS LETTERS (2007)
Investigation on the barrier height and inhomogeneity of nickel silicide Schottky
Shihua Huang et al.
APPLIED SURFACE SCIENCE (2006)
The effects of AlN buffer on the properties of InN epitaxial films grown on Si(111) by plasma-assisted molecular-beam epitaxy
CL Wu et al.
JOURNAL OF CRYSTAL GROWTH (2006)
The double Gaussian distribution of barrier heights in Au/n-GaAs Schottky diodes from I-V-T characteristics
AF Özdemir et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2006)
The role of the interface insulator layer and interface states on the current-transport mechanism of Schottky diodes in wide temperature range
S Altindal et al.
MICROELECTRONIC ENGINEERING (2006)
Direct evidence of 8:9 commensurate heterojunction formed between InN and AlN on c plane -: art. no. 241916
CL Wu et al.
APPLIED PHYSICS LETTERS (2005)
Optical properties of InN - the bandgap question
B Monemar et al.
SUPERLATTICES AND MICROSTRUCTURES (2005)
Gaussian distribution of inhomogeneous barrier height in Ag/p-Si (100) Schottky barrier diodes
S Acar et al.
APPLIED SURFACE SCIENCE (2004)
Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
S Gwo et al.
APPLIED PHYSICS LETTERS (2004)
Indium nitride (InN): A review on growth, characterization, and properties
AG Bhuiyan et al.
JOURNAL OF APPLIED PHYSICS (2003)
Trap density in conducting organic semiconductors determined from temperature dependence of J-V characteristics
V Kumar et al.
JOURNAL OF APPLIED PHYSICS (2003)
Temperature dependence of characteristic parameters of the H-terminated Sn/p-Si(100) Schottky contacts
S Karatas et al.
APPLIED SURFACE SCIENCE (2003)
Effects of film polarities on InN growth by molecular-beam epitaxy
K Xu et al.
APPLIED PHYSICS LETTERS (2003)
Effect of AlN buffer layer on the growth of InN epitaxial film on Si substrate
T Yamaguchi et al.
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS (2003)
Optical bandgap energy of wurtzite InN
T Matsuoka et al.
APPLIED PHYSICS LETTERS (2002)
Unusual properties of the fundamental band gap of InN
J Wu et al.
APPLIED PHYSICS LETTERS (2002)
Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys
A Hattab et al.
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY (2002)
Recent advances in Schottky barrier concepts
RT Tung
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2001)
Effect of an AlN buffer layer on the epitaxial growth of InN by molecular-beam epitaxy
H Lu et al.
APPLIED PHYSICS LETTERS (2001)
Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2001)