Related references
Note: Only part of the references are listed.InGaAs/InAsSb strained layer superlattices for mid-wave infrared detectors
Gamini Ariyawansa et al.
APPLIED PHYSICS LETTERS (2016)
Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry
P. T. Webster et al.
APPLIED PHYSICS LETTERS (2015)
Lattice parameter engineering for III-V long wave infrared photonics
G. Belenky et al.
ELECTRONICS LETTERS (2015)
Theoretical Aspects of Minority Carrier Extraction in Unipolar Barrier Infrared Detectors
David Z. -Y. Ting et al.
JOURNAL OF ELECTRONIC MATERIALS (2015)
InAs/InAs1-xSbx type-II superlattices for high performance long wavelength infrared detection
A. Haddadi et al.
APPLIED PHYSICS LETTERS (2014)
Modeling InAs/GaSb and InAs/InAsSb Superlattice Infrared Detectors
P. C. Klipstein et al.
JOURNAL OF ELECTRONIC MATERIALS (2014)
All-optical measurement of vertical charge carrier transport in mid-wave infrared InAs/GaSb type-II superlattices
B. V. Olson et al.
APPLIED PHYSICS LETTERS (2013)
Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect
Peng-Fei Qiao et al.
OPTICS EXPRESS (2012)
Properties of unrelaxed InAs1-XSbX alloys grown on compositionally graded buffers
G. Belenky et al.
APPLIED PHYSICS LETTERS (2011)
Shallow-Etch Mesa Isolation of Graded-Bandgap W''-Structured Type II Superlattice Photodiodes
E. H. Aifer et al.
JOURNAL OF ELECTRONIC MATERIALS (2010)
MBE grown type-II MWIR and LWIR superlattice photodiodes
Cory J. Hill et al.
INFRARED PHYSICS & TECHNOLOGY (2007)
Band parameters for III-V compound semiconductors and their alloys
I Vurgaftman et al.
JOURNAL OF APPLIED PHYSICS (2001)