Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 17, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4966221
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Funding
- National Natural Science Foundation of China [61474126, 51301043]
- Natural Science Foundation of Zhejiang Province [LY16F040002]
- National Key Research and Development Program of China [2016YFF0203600]
- program for Ningbo Municipal Science and Technology Innovative Research Team [2016B10005]
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An immunosensor is proposed based on the indium-gallium-zinc-oxide (IGZO) electric-double-layer thin-film transistor (EDL TFT) with a separating extended gate. The IGZO EDL TFT has a field-effect mobility of 24.5 cm(2) V-1 s(-1) and an operation voltage less than 1.5 V. The sensors exhibit the linear current response to label-free target immune molecule in the concentrations ranging from 1.6 to 368 x 10(-15) g/ml with a detection limit of 1.6 x 10(-15) g/ml (0.01 fM) under an ultralow operation voltage of 0.5 V. The IGZO TFT component demonstrates a consecutive assay stability and recyclability due to the unique structure with the separating extended gate. With the excellent electrical properties and the potential for plug-in-card-type multifunctional sensing, extended-gate-type IGZO EDL TFTs can be promising candidates for the development of a label-free biosensor for public health applications. Published by AIP Publishing.
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