Dielectric relaxation behavior and energy storage properties in Ba1-x(Bi0.5 K0.5)xTi0.85Zr0.15O3 ceramics

The effects of (Bi0.5K0.5)(2+) content on the microstructures, dielectric properties and energy storage properties of Ba1- x(Bi-0.5 K-0.5)(x)Ti0.85Zr0.15O3 (x = 0, 0.02, 0.04, 0.06, 0.08, 0.1; BZTO) ceramics were systematically investigated. The dielectric properties of the doped BZTO (x = 0.02-0.1) ceramics as a function of temperature exhibit a wide peak, indicating a diffuse phase transition in doped BZTO ceramics. The diffuse phase transition leads to the good dielectric stability for doped BZTO (x = 0.02-0.1) ceramics over a wide temperature range (-200 degrees C-120 degrees C). Also, the slim polarization electric field (P-E) loops were observed in the x = 0.06 and x = 0.08 samples, showing lower remnant polarization (P-r) than that of pure BZTO ceramic obviously. The x= 0.06 sample exhibits the highest energy storage density of 0.90 J/cm(3) together with a high energy storage efficiency of 90.4% at 30 kV/cm. (C) 2019 Elsevier B.V. All rights reserved.