Low voltage organic permeable base N-type transistor

A vertical n-type organic permeable metal base transistor was fabricated using N, N-ditridecylperylene-3,4,9,10-tetracarboxylic diimide as an active material for making emitter and collector regions. A composite of Al//C-60/Al/AlOx forms the base region of the proposed structure. The detailed study of the Early effect was carried out for determining the intrinsic gain, transconductance, and output impedance which were found to be 92, 145 mu Omega(-1), and 0.634 M Omega, respectively, at an applied bias of 1 V between collector-emitter contacts. The device is capable of operating at a low voltage of 1 V, which makes it suitable for low voltage and high frequency applications. Published by AIP Publishing.