Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 16, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4964882
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Funding
- National Science Foundation [DMR-1454200]
- Basic Science Research Program through NRF [2014R1A1A2057202]
- KISTI [KSC-2014-C2-046]
- U.S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Science and Engineering Division
- National Research Foundation of Korea [2014R1A1A2057202] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [1454200] Funding Source: National Science Foundation
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Metal electrodes are a universal element of all electronic devices. Conducting SrRuO3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T-C), which can lead to higher Joule heating and energy loss in the devices. Here, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thin films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and T-C as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. This result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way to improved device applications. Published by AIP Publishing.
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