Related references
Note: Only part of the references are listed.Synaptic Metaplasticity Realized in Oxide Memristive Devices
Zheng-Hua Tan et al.
ADVANCED MATERIALS (2016)
Synaptic devices based on purely electronic memristors
Ruobing Pan et al.
APPLIED PHYSICS LETTERS (2016)
Pt/Ta2O5/HfO2-x/Ti Resistive Switching Memory Competing with Multilevel NAND Flash
Jung Ho Yoon et al.
ADVANCED MATERIALS (2015)
Single-crystalline metal filament-based resistive switching in a nitrogen-doped carbon film containing conical nanopores
Fei Zhuge et al.
APPLIED PHYSICS LETTERS (2015)
Training andoperation of an integrated neuromorphic network based on metal-oxide memristors
M. Prezioso et al.
NATURE (2015)
Mechanism for resistive switching in chalcogenide-based electrochemical metallization memory cells
Fei Zhuge et al.
AIP ADVANCES (2015)
Associative Learning with Temporal Contiguity in a Memristive Circuit for Large-Scale Neuromorphic Networks
Yi Li et al.
ADVANCED ELECTRONIC MATERIALS (2015)
Ultra-Low-Energy Three-Dimensional Oxide-Based Electronic Synapses for Implementation of Robust High-Accuracy Neuromorphic Computation Systems
Bin Gao et al.
ACS NANO (2014)
Highly Uniform, Electroforming-Free, and Self-Rectifying Resistive Memory in the Pt/Ta2O5/HfO2-x/TiN Structure
Jung Ho Yoon et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Direct Observation of Conversion Between Threshold Switching and Memory Switching Induced by Conductive Filament Morphology
Haitao Sun et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments
Hao Chen et al.
CARBON (2014)
Reactive ZnO/Ti/ZnO interfaces studied by hard x-ray photoelectron spectroscopy
Ronny Knut et al.
JOURNAL OF APPLIED PHYSICS (2014)
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
F. Pan et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)
Incremental resistance programming of programmable metallization cells for use as electronic synapses
D. Mahalanabis et al.
SOLID-STATE ELECTRONICS (2014)
Learning processes modulated by the interface effects in a Ti/conducting polymer/Ti resistive switching cell
Fei Zeng et al.
RSC ADVANCES (2014)
Enabling an Integrated Rate-temporal Learning Scheme on Memristor
Wei He et al.
SCIENTIFIC REPORTS (2014)
Memristive learning and memory functions in polyvinyl alcohol polymer memristors
Yan Lei et al.
AIP ADVANCES (2014)
Quantum-size effects in hafnium-oxide resistive switching
Shibing Long et al.
APPLIED PHYSICS LETTERS (2013)
Emulating the paired-pulse facilitation of a biological synapse with a NiOx-based memristor
S. G. Hu et al.
APPLIED PHYSICS LETTERS (2013)
Cycle-to-Cycle Intrinsic RESET Statistics in HfO2-Based Unipolar RRAM Devices
Shibing Long et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Pattern classification by memristive crossbar circuits using ex situ and in situ training
Fabien Alibart et al.
NATURE COMMUNICATIONS (2013)
Ultrafast Synaptic Events in a Chalcogenide Memristor
Yi Li et al.
SCIENTIFIC REPORTS (2013)
Voltage and Power-Controlled Regimes in the Progressive Unipolar RESET Transition of HfO2-Based RRAM
Shibing Long et al.
SCIENTIFIC REPORTS (2013)
Effects of Moisture on the Switching Characteristics of Oxide-Based, Gapless-Type Atomic Switches
Tohru Tsuruoka et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Synaptic Learning and Memory Functions Achieved Using Oxygen Ion Migration/Diffusion in an Amorphous InGaZnO Memristor
Zhong Qiang Wang et al.
ADVANCED FUNCTIONAL MATERIALS (2012)
Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
Qi Liu et al.
ADVANCED MATERIALS (2012)
Mechanism for resistive switching in an oxide-based electrochemical metallization memory
Shanshan Peng et al.
APPLIED PHYSICS LETTERS (2012)
Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing
Duygu Kuzum et al.
NANO LETTERS (2012)
Short-Term Memory to Long-Term Memory Transition in a Nanoscale Memristor
Ting Chang et al.
ACS NANO (2011)
Purely Electronic Switching with High Uniformity, Resistance Tunability, and Good Retention in Pt-Dispersed SiO2 Thin Films for ReRAM
Byung Joon Choi et al.
ADVANCED MATERIALS (2011)
An Electronic Synapse Device Based on Metal Oxide Resistive Switching Memory for Neuromorphic Computation
Shimeng Yu et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES (2011)
ZnO Schottky barriers and Ohmic contacts
Leonard J. Brillson et al.
JOURNAL OF APPLIED PHYSICS (2011)
Improvement of resistive switching in Cu/ZnO/Pt sandwiches by weakening the randomicity of the formation/rupture of Cu filaments
Fei Zhuge et al.
NANOTECHNOLOGY (2011)
A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure
Kyung Min Kim et al.
NANOTECHNOLOGY (2011)
Short-term plasticity and long-term potentiation mimicked in single inorganic synapses
Takeo Ohno et al.
NATURE MATERIALS (2011)
Nanoscale Memristor Device as Synapse in Neuromorphic Systems
Sung Hyun Jo et al.
NANO LETTERS (2010)
Complementary resistive switches for passive nanocrossbar memories
Eike Linn et al.
NATURE MATERIALS (2010)
The missing memristor found
Dmitri B. Strukov et al.
NATURE (2008)
Electrical and interfacial properties of nonalloyed Ti/Au ohmic and Pt Schottky contacts on Zn-terminated ZnO
HK Kim et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)
Ti/Au n-type Ohmic contacts to bulk ZnO substrates -: art. no. 212106
HS Yang et al.
APPLIED PHYSICS LETTERS (2005)
ZnO p-n homojunctions and ohmic contacts to Al-N-co-doped p-type ZnO -: art. no. 092103
F Zhuge et al.
APPLIED PHYSICS LETTERS (2005)