Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 14, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4963887
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Funding
- National Natural Science Foundation of China [51272261, 61474127]
- Chinese National Program on Key Basic Research Project [2012CB933003]
- Zhejiang Natural Science Foundation [LR15F040002]
- Ningbo Natural Science Foundation [2015A610111]
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An anomalous rectification was observed in a purely electronic memristive device Ti/ZnO/Pt. It could be due to (1) an Ohmic or quasi-Ohmic contact at the ZnO/Pt interface and (2) a Schottky contact at the Ti/ZnO interface. The Ohmic contact originates from the reduction of ZnO occurring in the whole film instead of only at the Ti/ZnO interface. The Schottky contact may come from moisture adsorbed in the nanoporous ZnO. The conduction in the electroformed device is controlled by the carrier trapping/detrapping of the trap sites, inducing a poor rectification and high nonlinearity. Furthermore, a complementary resistive switching was achieved. Published by AIP Publishing.
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