Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 25, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4972514
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Funding
- U.S. Department of Energy's National Nuclear Security Administration [DE-AC04-94AL85000]
- Sandia National Laboratories Truman Fellowship Program
- Laboratory Directed Research and Development (LDRD) program
- Australian Research Council [CE11E0001017]
- U.S. Army Research Office [W911NF-13-1-0024]
- NSW Node of the Australian National Fabrication Facility
- European Union's Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie Grant [654712]
- Marie Curie Actions (MSCA) [654712] Funding Source: Marie Curie Actions (MSCA)
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Silicon-based metal-oxide-semiconductor quantum dots are prominent candidates for high-fidelity, manufacturable qubits. Due to silicon's band structure, additional low-energy states persist in these devices, presenting both challenges and opportunities. Although the physics governing these valley states has been the subject of intense study, quantitative agreement between experiment and theory remains elusive. Here, we present data from an experiment probing the valley states of quantum dot devices and develop a theory that is in quantitative agreement with both this and a recently reported experiment. Through sampling millions of realistic cases of interface roughness, our method provides evidence that the valley physics between the two samples is essentially the same. Published by AIP Publishing.
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