Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 23, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4953074
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Funding
- National Science Foundation [DMR-1505849]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1505849] Funding Source: National Science Foundation
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In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of similar to 1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 mu S/mu m and desirable drain current saturation with an output resistance of similar to 100 K Omega mu m. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailored diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics. Published by AIP Publishing.
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