Related references
Note: Only part of the references are listed.High-power and high-temperature operation of an InGaN laser over 3W at 85 °C using a novel double-heat-flow packaging technology
Shinichiro Nozaki et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2016)
Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact
Benjamin P. Yonkee et al.
OPTICS EXPRESS (2016)
Optical-loss suppressed InGaN laser diodes using undoped thick waveguide structure
Masao Kawaguchi et al.
GALLIUM NITRIDE MATERIALS AND DEVICES XI (2016)
Background story of the invention of efficient blue InGaN light emitting diodes (Nobel Lecture)
Shuji Nakamura
ANNALEN DER PHYSIK (2015)
Bulk GaN flip-chip violet light-emitting diodes with optimized efficiency for high-power operation
Christophe A. Hurni et al.
APPLIED PHYSICS LETTERS (2015)
On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements
Joachim Piprek et al.
APPLIED PHYSICS LETTERS (2015)
High-power blue laser diodes with indium tin oxide cladding on semipolar (20(2)over-bar(1)over-bar) GaN substrates
A. Pourhashemi et al.
APPLIED PHYSICS LETTERS (2015)
How to decide between competing efficiency droop models for GaN-based light-emitting diodes
Joachim Piprek
APPLIED PHYSICS LETTERS (2015)
Efficient High-Power Laser Diodes
Paul Crump et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2013)
Influence of indium content and temperature on Auger-like recombination in InGaN quantum wells grown on (111) silicon substrates
B. Galler et al.
APPLIED PHYSICS LETTERS (2012)
Second-order piezoelectricity in wurtzite III-N semiconductors
Joydeep Pal et al.
PHYSICAL REVIEW B (2011)
Determination of Internal Loss in Nitride Lasers from First Principles
Emmanouil Kioupakis et al.
APPLIED PHYSICS EXPRESS (2010)
Efficiency droop in nitride-based light-emitting diodes
Joachim Piprek
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE (2010)
Physics of high-power InGaN/GaN lasers
J Piprek et al.
IEE PROCEEDINGS-OPTOELECTRONICS (2002)
Share Paper
