Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4942777
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Funding
- AFOSR [FA9550-15-1-0324]
- NSF [DMR-1309137]
- MDA [HQ0147-14-C-7011]
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1309137] Funding Source: National Science Foundation
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A simple and unique laser scheme comprised of a finite-size nanopillar array on a silicon-on-insulator grating layer is introduced for realizing an on-chip monolithically integrated light source. A photonic band-edge mode, confined by the grating substrate in the vertical direction, shows a quality factor as high as 4000. We show that the proposed laser cavity allows direct coupling into a waveguide, which is essential for monolithic integration. In addition, III-V semiconductor nanopillars are grown on a silicon-on-insulator grating substrate in order to demonstrate the feasibility of epitaxy on 3D surfaces. These results provide a practical solution for on-chip integration of a monolithic light source. (C) 2016 AIP Publishing LLC.
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