Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 4, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4960001
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Funding
- Solid State Lighting & Energy Electronics Center (SSLEEC)
- KACST-KAUST-UCSB Solid State Lighting Program (SSLP)
- NSF funded National Nanotechnology Infrastructure Network [ECS-03357650]
- Materials Research Science and Engineering Center program of the NSF [DMR 1121053]
- NSF Graduate Research Fellowship Program [DGE 1144085]
- CISEI program through the UCSB MRL
- International Center for Materials Research under NSF [DMR 0843934]
- Direct For Mathematical & Physical Scien
- Division Of Materials Research [0843934] Funding Source: National Science Foundation
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The performance of multiple quantum well green and yellow semipolar light-emitting diodes (LEDs) is limited by relaxation of highly strained InGaN-based active regions and the subsequent formation of nonradiative defects. Limited area epitaxy was used to block glide of substrate threading dislocations and to reduce the density of misfit dislocations (MDs) directly beneath the active region of (20 (2) over bar1) LEDs. Devices were grown and fabricated on a 1D array of narrow substrate mesas to limit the MD run length. Reducing the mesa width from 20 mu m to 5 mu m lowered the density of basal plane and non-basal plane MDs on the mesas and limited the number of defect-generating dislocation intersections. This improvement in material quality yielded a 73% enhancement in peak external quantum efficiency for the devices with the narrowest mesas compared to the devices with the widest mesas. Published by AIP Publishing.
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