Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 8, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4961442
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Funding
- Office of Naval Research under the DATE MURI program [N00014-11-1-0721]
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AlN/GaN resonant tunneling diodes grown on low dislocation density semi-insulating bulk GaN substrates via plasma-assisted molecular-beam epitaxy are reported. The devices were fabricated using a six mask level, fully isolated process. Stable room temperature negative differential resistance (NDR) was observed across the entire sample. The NDR exhibited no hysteresis, background light sensitivity, or degradation of any kind after more than 1000 continuous up-and-down voltage sweeps. The sample exhibited a similar to 90% yield of operational devices which routinely displayed an average peak current density of 2.7 kA/cm(2) and a peak-to-valley current ratio of approximate to 1.15 across different sizes. Published by AIP Publishing.
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