Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 10, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4943516
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Funding
- EPSRC
- St. John's College, Cambridge
- Marie Sklodowska-Curie Individual Fellowship (Global) under grant ARTIST from European Union [656870]
- Lindemann Trust
- ERC grant InsituNANO [279342]
- EPSRC grant GRAPHTED [EP/K016636/1]
- Institut Universitaire de France
- EU [285275, 604391]
- [Marie-Curie-ITN 607904-SPINOGRAPH]
- Marie Curie Actions (MSCA) [656870] Funding Source: Marie Curie Actions (MSCA)
- Engineering and Physical Sciences Research Council [EP/K016636/1] Funding Source: researchfish
- EPSRC [EP/K016636/1] Funding Source: UKRI
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We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into Co/h-BN/Fe magnetic tunnel junctions (MTJs). The h-BN monolayer is directly grown by chemical vapor deposition on Fe. The Conductive Tip Atomic Force Microscopy (CT-AFM) measurements reveal the homogeneity of the tunnel behavior of our h-BN layers. As expected for tunneling, the resistance depends exponentially on the number of h-BN layers. The h-BN monolayer properties are also characterized through integration into complete MTJ devices. A Tunnel Magnetoresistance of up to 6% is observed for a MTJ based on a single atomically thin h-BN layer. (C) 2016 Author(s).
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