Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 26, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4973405
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Funding
- Sumitomo Chemical Co., Ltd.
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We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of similar to 1 nm, observing a strong Raman intensity enhancement for high quality GeOI structure in ultra thin regime due to quantum size effect. This advanced Ge layer transfer technique enabled us to demonstrate UTB-GeOI nMOSFETs with the body thickness of only 4 nm. Published by AIP Publishing.
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