Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 22, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4952600
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Funding
- Research Grants Council of Hong Kong
- DARPA (MTO EPHI)
- American Institute for Manufacturing (AIM) Integrated Photonics
- U.S. Department of Energy NNSA [DE-AC04-94AL85000]
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Subwavelength micro-disk lasers (MDLs) as small as 1 mu m in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-mu m wavelength range with low thresholds down to 35 mu W at 10K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal-oxide-semiconductor platform. Published by AIP Publishing.
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