Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4941538
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Funding
- National Natural Science Foundation of China [61306097, 61376097]
- MEXT of Japan [23246058, 26249038]
- Grants-in-Aid for Scientific Research [23246058, 26249038] Funding Source: KAKEN
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We have demonstrated a low temperature formation (300 degrees C) of higher-k HfO2 using atomic layer deposition (ALD) on an in-situ thermal oxidation GeOx interfacial layer. It is found that the cubic phase is dominant in the HfO2 film with an epitaxial-like growth behavior. The maximum permittivity of 42 is obtained for an ALD HfO2 film on a 1-nm-thick GeOx form by the in-situ thermal oxidation. It is suggested from physical analyses that the crystallization of cubic phase HfO2 can be induced by the formation of six-fold crystalline GeOx structures in the underlying GeOx interfacial layer. (C) 2016 AIP Publishing LLC.
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