Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 5, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4941397
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Funding
- Deutsche Forschungsgemeinschaft [SFB 1083, HO2295/8]
- NSF Grant [DMR-1311845, DMR-1311849]
- Alexander von Humboldt Foundation
- Chinese Academy of Sciences President's International Fellowship Initiative
- Division Of Materials Research
- Direct For Mathematical & Physical Scien [1311845, 1311849] Funding Source: National Science Foundation
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We demonstrate an all-optical approach to probe electronic band structure at buried interfaces involving polar semiconductors. Femtosecond optical pulses excite coherent phonons in epitaxial GaP films grown on Si(001) substrate. We find that the coherent phonon amplitude critically depends on the film growth conditions, specifically in the presence of antiphase domains, which are independently characterized by transmission electron microscopy. We determine the Fermi levels at the buried interface of GaP/Si from the coherent phonon amplitudes and demonstrate that the internal electric fields are created in the nominally undoped GaP films as well as the Si substrates, possibly due to the carrier trapping at the antiphase boundaries and/or at the interface. (C) 2016 AIP Publishing LLC.
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