Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 3, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4958889
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Funding
- JSPS [26220903]
- Mitsubishi Materials Corporation in Japan
- Grants-in-Aid for Scientific Research [26220903] Funding Source: KAKEN
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The hydrogen-terminated diamond surface (C-H diamond) has a two-dimensional hole gas (2DHG) layer independent of the crystal orientation. A 2DHG layer is ubiquitously formed on the C-H diamond surface covered by atomic-layer-deposited-Al2O3. Using Al2O3 as a gate oxide, C-H diamond metal oxide semiconductor field-effect transistors (MOSFETs) operate in a trench gate structure where the diamond side-wall acts as a channel. MOSFETs with a side-wall channel exhibit equivalent performance to the lateral C-H diamond MOSFET without a side-wall channel. Here, a vertical-type MOSFET with a drain on the bottom is demonstrated in diamond with channel current modulation by the gate and pinch off. Published by AIP Publishing.
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