Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4939460
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- SRC-GRC [2451.001]
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In-situ direct ammonia (NH3) plasma nitridation has been used to passivate the Al2O3/SiGe interfaces with Si nitride and oxynitride. X-ray photoelectron spectroscopy of the buried Al2O3/SiGe interface shows that NH3 plasma pre-treatment should be performed at high temperatures (300 degrees C) to fully prevent Ge nitride and oxynitride formation at the interface and Ge out-diffusion into the oxide. C-V and I-V spectroscopy results show a lower density of interface traps and smaller gate leakage for samples with plasma nitridation at 300 degrees C. (C) 2016 AIP Publishing LLC.
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