Journal
APPLIED PHYSICS LETTERS
Volume 109, Issue 18, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4966899
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Funding
- National Natural Science Foundation of China [61376019, 61504010, 61511130045]
- Beijing Natural Science Foundation [4142038]
- Fundamental Research Funds for the Central Universities [2015RC13]
- State Key Laboratory of Information Photonics and Optical Communications (Beijing University of Posts and Telecommunications), P. R. China
- BUPT Excellent Ph. D. Students Foundation [CX2016305]
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We report a self-powered photodetector based on the graphene/GaAs nanowire Schottky junctions. The device is fabricated by transferring a monolayer graphene onto an n-doped GaAs nanowire array. The nanowires are grown by Au-catalyzed metal organic chemical vapor deposition, and the Au particles are subsequently removed by wet etching to achieve close contact between graphene and GaAs. The device exhibits a responsivity of 1.54 mA/W at zero bias and a short response/recover time of 71/194 ls at room temperature, showing a strong possibility for high-speed near-infrared applications. Published by AIP Publishing.
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