4.6 Article

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

Journal

APPLIED PHYSICS LETTERS
Volume 109, Issue 4, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4959831

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Funding

  1. ONR PECASE Program
  2. MRSEC program of the National Science Foundation [DMR-1419807]

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Ohmic contacts fabricated by regrowth of n(+) GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend upon the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends. Published by AIP Publishing.

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