Related references
Note: Only part of the references are listed.Random telegraph noise analysis in AlOx/WOy resistive switching memories
Ye Zhang et al.
APPLIED PHYSICS LETTERS (2014)
Origin of the current discretization in deep reset states of an Al2O3/Cu-based conductive-bridging memory, and impact on state level and variability
A. Belmonte et al.
APPLIED PHYSICS LETTERS (2014)
Metallic to hopping conduction transition in Ta2O5-x/TaOy resistive switching device
Ye Zhang et al.
APPLIED PHYSICS LETTERS (2014)
On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime
L. Goux et al.
JOURNAL OF APPLIED PHYSICS (2014)
Low temperature reduction in Ta-O and Nb-O thin films
A. Nowak et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2014)
Random telegraph noise and resistance switching analysis of oxide based resistive memory
Shinhyun Choi et al.
NANOSCALE (2014)
Modeling the Impact of Reset Depth on Vacancy-Induced Filament Perturbations in HfO2 RRAM
Nagarajan Raghavan et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Resistive switching mechanisms relating to oxygen vacancies migration in both interfaces in Ti/HfOx/Pt memory devices
Y. S. Lin et al.
JOURNAL OF APPLIED PHYSICS (2013)
In situ observation of filamentary conducting channels in an asymmetric Ta2O5-x/TaO2-x bilayer structure
Gyeong-Su Park et al.
NATURE COMMUNICATIONS (2013)
Electronic structure and transport measurements of amorphous transition-metal oxides: observation of Fermi glass behavior
I. Goldfarb et al.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING (2012)
Investigation of One-Dimensional Thickness Scaling on Cu/HfOx/Pt Resistive Switching Device Performance
Ming Wang et al.
IEEE ELECTRON DEVICE LETTERS (2012)
Modeling of electron conduction in contact resistive random access memory devices as random telegraph noise
Yuan Heng Tseng et al.
JOURNAL OF APPLIED PHYSICS (2012)
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities
Tibor Grasser
MICROELECTRONICS RELIABILITY (2012)
Nitrogen-induced improvement of resistive switching uniformity in a HfO2-based RRAM device
Hongwei Xie et al.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY (2012)
Sub-nanosecond switching of a tantalum oxide memristor
Antonio C. Torrezan et al.
NANOTECHNOLOGY (2011)
A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5-x/TaO2-x bilayer structures
Myoung-Jae Lee et al.
NATURE MATERIALS (2011)
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
Daniele Ielmini et al.
APPLIED PHYSICS LETTERS (2010)
High switching endurance in TaOx memristive devices
J. Joshua Yang et al.
APPLIED PHYSICS LETTERS (2010)
Probing Cu doped Ge0.3Se0.7 based resistance switching memory devices with random telegraph noise
R. Soni et al.
JOURNAL OF APPLIED PHYSICS (2010)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Resistive switching in transition metal oxides
Akihito Sawa
MATERIALS TODAY (2008)