Journal
APPLIED PHYSICS LETTERS
Volume 108, Issue 6, Pages -Publisher
AIP Publishing
DOI: 10.1063/1.4941923
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Funding
- Alexander von Humboldt Foundation
- Czech Science Foundation (GACR) [13-20507S]
- Scientific Grant Agency of Slovak Republic (VEGA) [2/0105/13, 2/0098/13]
- Science and Technology Assistance Agency (Slovak Republic) [APVV-14-0297]
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We propose a device concept for a hybrid nanocrystal/III-nitride based nano-LED. Our approach is based on the direct electro-optical pumping of nanocrystals (secondary excitation) by electrically driven InGaN/GaN nano-LEDs as the primary excitation source. To this end, a universal hybrid optoelectronic platform was developed for a large range of optically active nano-and mesoscopic structures. The advantage of the approach is that the emission of the nanocrystals can be electrically induced without the need of contacting them. The proof of principal was demonstrated for the electro-optical pumping of CdSe nanocrystals. The nano-LEDs with a diameter of 100 nm exhibit a very low current of similar to 8 nA at 5V bias which is several orders of magnitude smaller than for those conventionally used. The leakage currents in the device layout were typically in the range of 8 pA to 20 pA/cm(2) at 5V bias. The photon-photon down conversion efficiency was determined to be 27%. Microphotoluminescence and microelectroluminescence characterization demonstrate the potential for future optoelectronics and highly secure green information technology applications. (C) 2016 AIP Publishing LLC.
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