Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 66, Issue 7, Pages 1682-1687Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2019.2910493
Keywords
Charge generation; GaN; gate-connected field plate; HEMT; single-event transients (SETs); single-photon absorption; X-rays
Funding
- Office of Naval Research (ONR)
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A focused pulsed X-ray beam is used to determine how the redistribution of the electric field by the gate-connected field plate affects single-event transient (SET) susceptibility of an AlGaN/GaN Schottky-gate HEMT on SiC. SETs generated by scanning the X-ray beam across the HEMT depend strongly on the presence of the field plate, radiation strike location, bias conditions, and X-ray photon energy. For the particular HEMT we tested, the gate-connected field plate reduces the electric-field strength near the edge of the gate by a factor of approximately 2, which results in faster decaying transients and less collected charge.
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