Journal
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Volume 66, Issue 7, Pages 1688-1693Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TNS.2019.2914494
Keywords
Radiation damage; SiC Schottky barrier diode (SBD); single-event burnout; thermal runaway
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The thermal runaway in SiC Schottky barrier diodes (SBDs) caused by heavy ions was identified by a device simulator with parameters carefully extrapolated to an extended temperature range far exceeding the melting point of SiC. It is shown that the critical electric field needed to activate the impact ionization attributable to SiC material and the Schottky barrier contact on it are responsible for the thermal runaway in SiC SBDs.
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