Journal
APPLIED PHYSICS EXPRESS
Volume 9, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.024101
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Funding
- Ministry of Education, Culture, Sports, Science and Technology, Japan
- Industry-Academia Collaborative R&D Program from the Japan Science and Technology Agency, Japan
- Strategic Information and Communications R&D Promotion Programme (SCOPE) from the Ministry of Internal Affairs and Communications
- Grants-in-Aid for Scientific Research [26249045, 16H06292] Funding Source: KAKEN
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A large increase in oscillation frequency was achieved in resonant-tunneling-diode (RTD) terahertz oscillators by reducing the conduction loss. An n(+)-InGaAs layer under the air-bridge electrode connected to the RTD was observed to cause a large conduction loss for high-frequency current due to the skin effect. By introducing a new fabrication process removing the InGaAs layer, we obtained 1.92-THz oscillation, which extended the highest frequency of room-temperature electronic single oscillators. Theoretical calculations reasonably agreed with the experiment, and an oscillation above 2 THz is further expected with an improved structure of the slot antenna used as a resonator and radiator. (C) 2016 The Japan Society of Applied Physics
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