Journal
APPLIED PHYSICS EXPRESS
Volume 9, Issue 10, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.101002
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Funding
- Council for Science, Technology, and Innovation (CSTI)
- Cross-ministerial Strategic Innovation Promotion Program (SIP)
- NEDO
- Grants-in-Aid for Scientific Research [26420289] Funding Source: KAKEN
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The superior physical and electrical properties of aluminum oxynitride (AlON) gate dielectrics on AlGaN/GaN substrates in terms of thermal stability, reliability, and interface quality were demonstrated by direct AlON deposition and subsequent annealing. Nitrogen incorporation into alumina was proven to be beneficial both for suppressing intermixing at the insulator/AlGaN interface and reducing the number of electrical defects in Al2O3 films. Consequently, we achieved high-quality AlON/AlGaN/GaN metal-oxide-semiconductor capacitors with improved stability against charge injection and a reduced interface state density as low as 1.2 x 10(11) cm(-2) eV(-1). The impact of nitrogen incorporation into the insulator will be discussed on the basis of experimental findings. (C) 2016 The Japan Society of Applied Physics
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