A Charge Plasma-Based Monolayer Transition Metal Dichalcogenide Tunnel FET

In this paper, a charge plasma-based monolayer transition metal dichalcogenide (TMD) tunneling field-effect transistor (TFET) is investigated by solving self-consistent 3-D Poisson and Schrodinger equations in nonequilibrium Green's function(NEGF) framework. We propose a work function engineered charge plasma-based dual-metal source TFET (DMS TFET) structure for an optimum performance of the device. The proposed TFET structure demonstrates superior performance than the conventional charge plasma TFETs in terms of ION, I-ON/I-OFF ratio, and sub-threshold slope (SS). It provides ION of 222 mu A/mu m, I-ON/I-OFF ratio of 2.22 x 10(5), a minimum SS of 42.41 mV/decade, and an average SS of 54.15 mV/decade for three-decade increase in drain current (I-DS). The performance of the device is observed at different channel lengths. Based on this analysis, a device design guideline for sub-10-nm channel length TFETs is presented in the paper. Finally, the circuit level metrics of the proposed structure are estimated by calculating delay and energy-delay product of a 45-stage inverter chain.