Journal
APPLIED PHYSICS EXPRESS
Volume 9, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.042601
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan (MEXT)
- Adaptable and Seamless Technology transfer Program (A-STEP) by the Japan Science and Technology Agency (JST)
- Murata Science Foundation
- Research Institute of Electronics, Shizuoka University
- [26249147]
- Grants-in-Aid for Scientific Research [26249147] Funding Source: KAKEN
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We report the distinct scintillation properties of the well-known Ga2O3 semiconductor material. Under UV excitation, the photoluminescence (PL) emission peak appeared near a wavelength of 380nm with a quantum yield of 6%, and fast decays of 8 and 793 ns were observed. In contrast, the X-ray-induced scintillation spectrum showed an intense emission band near a wavelength of 380 nm, whose decay curve was reproduced using two exponential decay components with time constants of 8 and 977 ns. The pulse height spectrum of Cs-137 gamma-rays measured using Ga2O3 showed a clear photoabsorption peak with a light yield of 15000 +/- 1500 photons/MeV. (C) 2016 The Japan Society of Applied Physics
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