Journal
IEEE PHOTONICS TECHNOLOGY LETTERS
Volume 31, Issue 12, Pages 923-926Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LPT.2019.2913286
Keywords
Optical float zone; solar-blind; beta-Ga2O3; UV photodetector; MSM; linear array
Funding
- Department of Science and Technology (DST) through the Water Technology Initiative (WTI) [DSTO1519]
- Space Technology Cell (STC/ISRO)
- Ministry of Human Resource Development (MHRD) through the NIEIN Project
- Ministry of Electronics and Information Technology (MeitY)
- DST through the NNetRA
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In this letter, we demonstrate 1 x 8 linear metal-semiconductor-metal arrays of UV-C photodetectors based on optical-float-zone grown bulk (100)-oriented beta-Ga2O3. The as-grown polished bulk samples exhibited an RMS roughness of 1.4 nm and the full-width at half-maxima of 0.19 degrees. The average peak responsivity (257 nm), dark current, photo-to-dark current ratio, and UV-to-visible rejection ratio of the devices in the array were measured to be 4 AW(-1), 0.23 nA, similar to 10(2), and similar to 10(3), respectively, at a bias of 40 V. The uniformity as well as the variability of the detector parameters across the devices in the array was investigated before and after wire bonding.
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