Journal
APPLIED PHYSICS EXPRESS
Volume 9, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.051201
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Funding
- New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry (METI)
- Grants-in-Aid for Scientific Research [25286056] Funding Source: KAKEN
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Relatively nontoxic, earth-abundant Cl was incorporated into n-type SnS as a dopant. The existence of impurity phases was carefully identified in Sn(S1-x-yClx)-dense ceramics. The highest electron mobility (8.3 cm(2)V(-1) s(-1)) in n-type conduction was achieved in samples with x >= 0.005. Cl concentration is critical for conduction-type conversion, whereas carrier density and electron mobility are determined by sulfur-site deficiency. Carrier transport is explained by grain boundary potential barrier scattering in undoped p-type samples and by ionized impurity scattering in Cl-doped n-type samples. (C) 2016 The Japan Society of Applied Physics
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