4.5 Article

Direct observation of infinite NiO2 planes in LaNiO2 films

Journal

APPLIED PHYSICS EXPRESS
Volume 9, Issue 6, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.7567/APEX.9.061101

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Funding

  1. JSPS [24.2363, 23340098]
  2. Advanced Low Carbon Technology (ALCA), Japan Science and Technology
  3. Grants-in-Aid for Scientific Research [23340098] Funding Source: KAKEN

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Epitaxial thin films of LaNiO2, which is an oxygen-deficient perovskite with infinite layers of Ni1+O2, were prepared by a low-temperature reduction of LaNiO3 single-crystal films on NdGaO3 substrates. We report the high-angle annular dark-field and bright-field scanning transmission electron microscopy observations of infinite NiO2 planes of c-axis-oriented LaNiO2 epitaxial thin films with a layer stacking sequence of NiO2/La/NiO2. Resistivity measurements on the films show T-2 dependence between 400 and 150K and a negative Hall coefficient. (C) 2016 The Japan Society of Applied Physics

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