Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 7, Pages 1092-1095Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2914700
Keywords
HPHA; MFIS; ferroelectric domain; endurance
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Funding
- Future semiconductor Device Technology Development Program through the Ministry of Trade, Industry and Energy (MOTIE)
- Korea Semiconductor Research Consortium (KSRC) [10067794]
- MOTIE [10067764]
- Korea Evaluation Institute of Industrial Technology (KEIT) [10067794, 10067764] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We investigate the effects of high-pressure hydrogen annealing (HPHA) on W/ferroelectric Al:HfO2/interface layer (IL)/Si stacks. With HPHA, degradation in remnant polarization is observed in the pristine state due to ferroelectric domain pinning. However, after wake-up, a comparable remnant polarization is observed by domain de-pinning. In addition, HPHA improves the quality current and low interface trap density are maintained up to 10(7) cycles. As a result, the endurance improves up to 10(9) cycles and a stable retention is achieved up to 10(4) s at 85 degrees C. These results show that the HPHA can be a crucial process for ferroelectric HfO2-based transistor applications.
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