Journal
IEEE ELECTRON DEVICE LETTERS
Volume 40, Issue 7, Pages 1032-1035Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2019.2917032
Keywords
Hf0.5Zr0.5O2; ferroelectric memory; MFIS
Categories
Funding
- National Research Foundation of Korea (NRF) grant - Korean government [Ministry of Education, Science and Technology (MEST)] (Nonvolatile Memory Transistors Using Binary Ferroelectric Metal Oxides Thin Films) [NRF-2017R1A2B4007492]
- Electronics and Telecommunications Research Institute (ETRI) - Korean Government (Development of Neuromorphic Hardware by Using High Performance Memristor Device based on Ultra-Thin Film Structure) [19ZB1800]
- Institute for Information & Communication Technology Planning & Evaluation (IITP), Republic of Korea [19ZB1800] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [22A20130000119] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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Effects of controlling the film thickness of ferroelectric Hf0.5Zr0.5O2 (HZO) thin film were investigated to figure out the important design strategies for the metal-ferroelectric-insulator-semiconductor (MFIS) capacitors. Even though the maximum remnant polarization (2Pr) was obtained to be 23.4 mu C/cm(2) for the HZO capacitors with an HZO thickness of 20 nm, the ferroelectric memory window increased from 0.44 to 0.82 V with increasing the HZO thickness from 20 to 40 nm. The crystalline phases of the HZO thin films showed thickness-dependent variations with the relative dielectric permittivity.
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